GHz photon-activated hopping between localized states in a silicon quantum dot

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Ferrus, T. and Rossi, A. and Andreev, A. and Kodera, T. and Kambara, T. and Lin, W. and Oda, S. and Williams, D. A. (2014) GHz photon-activated hopping between localized states in a silicon quantum dot. New Journal of Physics, 16. 013016. ISSN 1367-2630 (https://doi.org/10.1088/1367-2630/16/1/013016)

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Abstract

We discuss the effects of gigahertz photon irradiation on a degenerately phosphorus-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2 K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to optically control and operate electrically isolated structures by microwave pulses. In quantum computing architectures, these results may lead to the use of microwave multiplexing to manipulate quantum states in a multi-qubit configuration.

ORCID iDs

Ferrus, T., Rossi, A. ORCID logoORCID: https://orcid.org/0000-0001-7935-7560, Andreev, A., Kodera, T., Kambara, T., Lin, W., Oda, S. and Williams, D. A.;
  • Item type:Article
    ID code:68709
    Dates:
    Date
    Event
    1 January 2014
    Published
    3 December 2013
    Accepted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:03 Jul 2019 16:26
    Last modified:11 Nov 2024 12:20
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/68709
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