Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

Yakushev, M V and Márquez-Prieto, J and Forbes, I and Edwards, P R and Zhivulko, V D and Mudryi, A V and Krustok, J and Martin, R W (2015) Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess. Journal of Physics D: Applied Physics, 48 (47). 475109. ISSN 1361-6463 (https://doi.org/10.1088/0022-3727/48/47/475109)

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Abstract

Thin films of Cu2ZnSnSe4 (CZTSe) with copper de�ficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the �film on glass whereas fi�lms on Mo/glass were used to produce a solar cell with ef�ficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identifi�cation of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.

ORCID iDs

Yakushev, M V, Márquez-Prieto, J, Forbes, I, Edwards, P R ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Zhivulko, V D, Mudryi, A V, Krustok, J and Martin, R W ORCID logoORCID: https://orcid.org/0000-0002-6119-764X;
  • Item type:Article
    ID code:54657
    Dates:
    Date
    Event
    2 November 2015
    Published
    18 September 2015
    Accepted
    14 July 2015
    Submitted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:11 Dec 2015 01:05
    Last modified:11 Nov 2024 11:12
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/54657
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