Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

Sousa, Marco A. and Esteves, Teresa C. and Sedrine, Nabiha Ben and Rodrigues, Joana and Lourenço, Márcio B. and Redondo-Cubero, Andrés and Alves, Eduardo and O'Donnell, Kevin P. and Bockowski, Michal and Wetzel, Christian and Correia, Maria R. and Lorenz, Katharina and Monteiro, Teresa (2015) Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen. Scientific Reports, 5. 9703. ISSN 2045-2322 (https://doi.org/10.1038/srep09703)

[thumbnail of Sousa-etal-SR-2015-Luminescence-studies-on-green-emitting-InGaN-GaN-MQWs-implanted]
Preview
 Text. Filename: Sousa_etal_SR_2015_Luminescence_studies_on_green_emitting_InGaN_GaN_MQWs_implanted.pdf
Final Published Version
License: Creative Commons Attribution 4.0 logo
Download (1MB)| Preview

Abstract

We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 1400°C. A broad blue band dominates the low temperature PL after thermal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment.

CORE (COnnecting REpositories)