Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron radiation

O'Donnell, K.P. and Martin, R.W. and White, M.E. and Tobin, M.J. and Mosselmans, J.F.W. and Watson, I.M. and Damiliano, B. and Grandjean, N. (2001) Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron radiation. MRS Online Proceedings Library, 639. G9.11. ISSN 0272-9172 (https://doi.org/10.1557/PROC-639-G9.11)

Full text not available in this repository.Request a copy

Abstract

The Daresbury synchrotron radiation source (SRS) provides bright, tunable x-rays for scattering and absorption probes of local structure. Scanning confocal microscopy and luminescence decay measurements employ the SRS in alternative ways, as a tunable luminescence excitation engine and as a source of weak, 160 ps pulses with a large pulse-topulse separation, respectively. This report first describes local atomic structure studies of InGaN epilayers by extended x-ray absorption fine structure (EXAFS). In addition, we report photoluminescence (PL) imaging, PL microspectroscopy and photoluminescence decay studies of various nitride samples, including tailored InGaN quantum wells and discs.

ORCID iDs

O'Donnell, K.P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, White, M.E., Tobin, M.J., Mosselmans, J.F.W., Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Damiliano, B. and Grandjean, N.;
CORE (COnnecting REpositories)