Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers

Tools

Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W. (2004) Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers. MRS Online Proceedings Library, 831. E3.22. ISSN 0272-9172 (https://doi.org/10.1557/PROC-831-E3.22)

Full text not available in this repository.Request a copy

Abstract

The behavior of the E2 and A1(LO) optical phonons in Inx Ga1-x N has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈ 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E2 and A1(LO) modes of InGaN.

ORCID iDs

Hernandez, S., Cusco, R., Artus, L., O'Donnell, K.P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Nanishi, Y., Kurouchi, M. and van der Stricht, W.;
CORE (COnnecting REpositories)