Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN

Kachkanov, V. and O'Donnell, K. P. and Rice, C. and Wolverson, D. and Martin, R. W. and Lorenz, K. and Alves, E. and Bockowski, M. (2011) Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN. MRS Online Proceedings Library, 1290. ISSN 1946-4274 (https://doi.org/10.1557/opl.2011.241)

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Abstract

We report the magnetic field splittings of emission lines assigned to the 5D0–7F2 transitions of Eu3+ centres in GaN. The application of a magnetic field in the c-axis direction (B||c) leads to a splitting of the major lines at 621 nm, 622 nm and 622.8 nm into two components. The Zeeman splitting is linear with magnetic field up to 5 Tesla for each line. In contrast, a magnetic field applied in the growth plane (B┴c) does not influence the photoluminescence spectra. The estimated g-factors vary slightly from sample to sample with mean values of g|| ~2.8, ~1.5 and ~2.0 for the emission lines at 621 nm, 622 nm and 622.8 nm respectively.

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