Electrophotographically patterned thin-film silicon transistors
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Gleskova, H. and Könenkamp, R. and Wagner, S. and Shen, D. S. (1996) Electrophotographically patterned thin-film silicon transistors. IEEE Electron Device Letters, 17 (6). pp. 264-266. (https://doi.org/10.1109/55.496452)
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The authors made amorphous silicon thin-film transistors on glass foil using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation. Toner masks were applied by feeding the glass substrate through a photocopier, or from laser-printed patterns on transfer paper. This all-printed patterning is an important step toward demonstrating a low-cost large-area circuit processing technology.
ORCID iDs
Gleskova, H.
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Item type: Article ID code: 33417 Dates: DateEvent1996PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Pure Administrator Date deposited: 13 Oct 2011 13:31 Last modified: 31 Jan 2025 01:38 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/33417
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