Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers

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Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, Robert and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W.; Gil, B. and Kuzuhara, M. and Manfra, M. and Wetzel, C., eds. (2005) Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. In: GaN, AIN, InN and Their Alloys. Materials research society symposium proceedings . Materials Research Society, USA, pp. 179-184. ISBN 1558997792

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Abstract

The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.

ORCID iDs

Hernandez, S., Cusco, R., Artus, L., O'Donnell, K.P., Martin, Robert ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Watson, I.M., Nanishi, Y., Kurouchi, M. and van der Stricht, W.; Gil, B., Kuzuhara, M., Manfra, M. and Wetzel, C.
  • Item type:Book Section
    ID code:32467
    Dates:
    Date
    Event
    1 July 2005
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:08 Aug 2011 15:13
    Last modified:18 Nov 2024 01:19
    URI:https://strathprints.strath.ac.uk/id/eprint/32467
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