Selectively excited photoluminescence from Eu- implanted GaN

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Wang, K. and Martin, R.W. and O'Donnell, K.P. and Katchkanov, V. and Nogales, E. and Lorenz, K. and Alves, E. and Ruffenach, S. and Briot, O. (2005) Selectively excited photoluminescence from Eu- implanted GaN. Applied Physics Letters, 87 (11). 112107. ISSN 0003-6951 (https://doi.org/10.1063/1.2045551)

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Abstract

The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 °C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to 5D0-7F2 (~622 nm), 5D0-7F3 (~664 nm), and 5D0-7F1 (~602 nm) transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the 5D0-7F2 multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356 nm, and a broad subedge absorption band centred at ~385 nm. Marked differences in the shape of the 5D0-7F2 PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms.

ORCID iDs

Wang, K., Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, O'Donnell, K.P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Katchkanov, V., Nogales, E., Lorenz, K., Alves, E., Ruffenach, S. and Briot, O.;
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