Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexylthienothiophene units

McEntee, Greg J. and Vilela, Filipe and Skabara, Peter and Anthopoulos, Thomas D. and Labram, John G. and Tierney, Steve and Harrington, Ross W. and Clegg, William (2011) Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexylthienothiophene units. Journal of Materials Chemistry, 21 (7). pp. 2091-2097. ISSN 0959-9428 (https://doi.org/10.1039/c0jm02607g)

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Abstract

The synthesis of a new conjugated material is reported; BDHTT–BBT features a central electron-deficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (−5.7 eV) and LUMO (−2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film samples. OFETs were constructed with vacuum deposited films of BDHTT–BBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 × 10−3 cm2 V−1 s−1, with an on/off ratio of 104–105 and a threshold voltage of −42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices.

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