Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexylthienothiophene units

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McEntee, Greg J. and Vilela, Filipe and Skabara, Peter and Anthopoulos, Thomas D. and Labram, John G. and Tierney, Steve and Harrington, Ross W. and Clegg, William (2011) Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexylthienothiophene units. Journal of Materials Chemistry, 21 (7). pp. 2091-2097. ISSN 0959-9428 (https://doi.org/10.1039/c0jm02607g)

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Abstract

The synthesis of a new conjugated material is reported; BDHTT–BBT features a central electron-deficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (−5.7 eV) and LUMO (−2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film samples. OFETs were constructed with vacuum deposited films of BDHTT–BBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 × 10−3 cm2 V−1 s−1, with an on/off ratio of 104–105 and a threshold voltage of −42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices.

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