Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy

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Bejtka, K. and Edwards, P. R. and Martin, R. W. and Fernández-Garrido, S. and Calleja, E. (2008) Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 104 (7). 073537. ISSN 0021-8979 (https://doi.org/10.1063/1.2993549)

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Abstract

A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565-660 °C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4%-30% and 0%-16%, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted.

ORCID iDs

Bejtka, K., Edwards, P. R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Martin, R. W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Fernández-Garrido, S. and Calleja, E.;
  • Item type:Article
    ID code:19453
    Dates:
    Date
    Event
    15 October 2008
    Published
    20 August 2008
    Accepted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Strathprints Administrator
    Date deposited:26 May 2010 13:33
    Last modified:11 Nov 2024 09:22
    URI:https://strathprints.strath.ac.uk/id/eprint/19453
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