Study of Ti contacts to corundum α-Ga2O3

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Massabuau, F and Nicol, D and Adams, F and Jarman, J and Roberts, J and Kovács, A and Chalker, P and Oliver, R (2021) Study of Ti contacts to corundum α-Ga2O3. Journal of Physics D: Applied Physics, 54 (38). 384001. ISSN 1361-6463 (https://doi.org/10.1088/1361-6463/ac0d28)

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Abstract

We present a study of the electrical, structural and chemical properties of Ti contacts on atomic layer deposited α-Ga2O3 film. Ti forms an ohmic contact with α-Ga2O3. The contact performance is highly dependent on the post-evaporation annealing temperature, where an improved conductivity is obtained when annealing at 450 °C, and a strong degradation when annealing at higher temperatures. Structural and chemical characterisation by transmission electron microscopy techniques reveal that the electrical improvement or degradation of the contact upon annealing can be attributed to oxidation of the Ti metallic layer by the Ga2O3 film in combination with the possibility for Ti diffusion into the Au layer. The results highlight that the grain boundaries and inclusions in the Ga2O3 film provide fast diffusion pathways for this reaction, leaving the α-Ga2O3 crystallites relatively unaffected - this result differs from previous reports conducted on β-Ga2O3. This study underlines the necessity for a phase-specific and growth method-specific study of contacts on Ga2O3 devices.

ORCID iDs

Massabuau, F ORCID logoORCID: https://orcid.org/0000-0003-1008-1652, Nicol, D, Adams, F, Jarman, J, Roberts, J, Kovács, A, Chalker, P and Oliver, R;
  • Item type:Article
    ID code:76944
    Dates:
    Date
    Event
    23 September 2021
    Published
    8 July 2021
    Published Online
    21 June 2021
    Accepted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:01 Jul 2021 11:50
    Last modified:16 Dec 2024 02:26
    URI:https://strathprints.strath.ac.uk/id/eprint/76944
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