Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon

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Zhao, X. and Huang, K. and Bruckbauer, J. and Shen, S. and Zhu, C. and Fletcher, P. and Feng, P. and Cai, Y. and Bai, J. and Trager-Cowan, C. and Martin, R. W. and Wang, T. (2020) Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon. Scientific Reports, 10 (1). 12650. ISSN 2045-2322 (https://doi.org/10.1038/s41598-020-69609-4)

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Abstract

It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of InGaN/GaN multiple quantum wells (MQWs) served as an active region for a light-emitting diode (LED). So far, this growth scheme has achieved a great success in the growth of III-nitride LEDs on c-plane substrates, but has not yet been applied in the growth of any other orientated III-nitride LEDs. In this paper, we have applied this growth scheme in the growth of semi-polar (11–22) green LEDs, and have investigated the impact of the SLS pre-layer on the optical performance of semi-polar (11–22) green LEDs grown on patterned (113) silicon substrates. Our results demonstrate that the semi-polar LEDs with the SLS pre-layer exhibit an improvement in both internal quantum efficiency and light output, which is similar to their c-plane counterparts. However, the performance improvement is not so significant as in the c-plane case. This is because the SLS pre-layer also introduces extra misfit dislocations for the semi-polar, but not the c-plane case, which act as non-radiative recombination centres.

ORCID iDs

Zhao, X., Huang, K., Bruckbauer, J. ORCID logoORCID: https://orcid.org/0000-0001-9236-9320, Shen, S., Zhu, C., Fletcher, P., Feng, P., Cai, Y., Bai, J., Trager-Cowan, C. ORCID logoORCID: https://orcid.org/0000-0001-8684-7410, Martin, R. W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X and Wang, T.;
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