Efficient base driver circuit for silicon carbide bipolar junction transistors
McNeill, N. and Stark, B.H. and Finney, S.J. and Holliday, D. and Dymond, H. (2018) Efficient base driver circuit for silicon carbide bipolar junction transistors. Electronics Letters, 54 (25). pp. 1450-1452. ISSN 0013-5194 (https://doi.org/10.1049/el.2018.7057)
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Abstract
The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a highvoltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.
ORCID iDs
McNeill, N., Stark, B.H., Finney, S.J., Holliday, D. ORCID: https://orcid.org/0000-0002-6561-4535 and Dymond, H.;-
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Item type: Article ID code: 65813 Dates: DateEvent13 December 2018Published16 October 2018AcceptedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Pure Administrator Date deposited: 16 Oct 2018 13:24 Last modified: 23 Sep 2024 00:45 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/65813