Efficient base driver circuit for silicon carbide bipolar junction transistors

McNeill, N. and Stark, B.H. and Finney, S.J. and Holliday, D. and Dymond, H. (2018) Efficient base driver circuit for silicon carbide bipolar junction transistors. Electronics Letters, 54 (25). pp. 1450-1452. ISSN 0013-5194 (https://doi.org/10.1049/el.2018.7057)

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The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a highvoltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.


McNeill, N., Stark, B.H., Finney, S.J., Holliday, D. ORCID logoORCID: https://orcid.org/0000-0002-6561-4535 and Dymond, H.;