Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films

Vilalta-Clemente, A. and Naresh-Kumar, G. and Nouf-Allehiani, M. and Gamarra, P. and di Forte-Poisson, M.A. and Trager-Cowan, C. and Wilkinson, A.J. (2017) Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films. Acta Materialia, 125. pp. 125-135. ISSN 1359-6454 (https://doi.org/10.1016/j.actamat.2016.11.039)

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Abstract

We describe the development of cross-correlation based high resolution electron backscatter diffraction (HR-EBSD) and electron channelling contrast imaging (ECCI), in the scanning electron microscope (SEM), to quantitatively map the strain variation and lattice rotation and determine the density and identify dislocations in nitride semiconductor thin films. These techniques can provide quantitative, rapid, non-destructive analysis of the structural properties of materials with a spatial resolution of order of tens of nanometers. HR-EBSD has a sensitivity to changes of strain and rotation of the order of 10−4 and 0.01° respectively, while ECCI can be used to image single dislocations up to a dislocation density of order 1010 cm−2. In the present work, we report the application of the cross-correlation based HR-EBSD approach to determine the tilt, twist, elastic strain and the distribution and type of threading dislocations in InAlN/AlN/GaN high electron mobility transistor (HEMT) structures grown on two different substrates, namely SiC and sapphire. We describe our procedure to estimate the distribution of geometrically necessary dislocations (GND) based on Nye-Kroner analysis and compare them with the direct imaging of threading dislocations (TDs) by ECCI. Combining data from HR-EBSD and ECCI observations allowed the densities of pure edge, mixed and pure screw threading dislocations to be fully separated.

ORCID iDs

Vilalta-Clemente, A., Naresh-Kumar, G. ORCID logoORCID: https://orcid.org/0000-0002-9642-8137, Nouf-Allehiani, M. ORCID logoORCID: https://orcid.org/0000-0002-4338-1048, Gamarra, P., di Forte-Poisson, M.A., Trager-Cowan, C. ORCID logoORCID: https://orcid.org/0000-0001-8684-7410 and Wilkinson, A.J.;
  • Item type:Article
    ID code:59588
    Dates:
    Date
    Event
    15 February 2017
    Published
    2 December 2016
    Published Online
    15 November 2016
    Accepted
    Keywords:EBSD, ECCI, dislocations, InAIN, HEMTs, electron backscatter diffraction, electron channelling contrast imaging, scanning electron microscope, nitride semiconductor thin films, geometrically necessary dislocations, Physics, Polymers and Plastics, Metals and Alloys, Ceramics and Composites, Electronic, Optical and Magnetic Materials
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Technology and Innovation Centre > Photonics
    Depositing user: Pure Administrator
    Date deposited:25 Jan 2017 10:31
    Last modified:04 Dec 2022 04:01
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/59588
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