Unraveling unprecedented charge carrier mobility through structure property relationship of four isomers of didodecyl[1]benzothieno[3,2-b][1]benzothiophene

Tools

Tsutsui, Yusuke and Schweicher, Guillaume and Chattopadhyay, Basab and Sakurai, Tsuneaki and Arlin, Jean-Baptiste and Ruzié, C. and Aliev, Almaz and Ciesielski, Artur and Colella, Silvia and Kennedy, Alan R. and Lemaur, Vincent and Olivier, Yoann and Hadji, Rachid and Sanguinet, Lionel and Castet, Frédéric and Osella, Silvio and Dudenko, Dymytro and Beljonne, David and Cornil, Jérôme and Samori, Paolo and Seki, Shu and Geerts, Yves H. (2016) Unraveling unprecedented charge carrier mobility through structure property relationship of four isomers of didodecyl[1]benzothieno[3,2-b][1]benzothiophene. Advanced Materials, 28 (33). pp. 7106-7114. ISSN 1521-4095 (https://doi.org/10.1002/adma.201601285)

[thumbnail of Tsutsui-etal-AM-2016-Unraveling-unprecedented-charge-carrier-mobility-through-structure-property]
Preview
 Text. Filename: Tsutsui_etal_AM_2016_Unraveling_unprecedented_charge_carrier_mobility_through_structure_property.pdf
Final Published Version
License: Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 logo
Download (3MB)| Preview

Abstract

Since the dawn of organic electronics in the 1970’s, academic and industrial research efforts have led to dramatic improvements of the solubility, stability, and electronic properties of organic semiconductors (OSCs).[1, 2] The common benchmark to characterize the electrical performances of OSCs is their charge carrier mobility μ (cm2 V–1 s–1), defined as the drift velocity of the charge carrier (cm s–1) per unit of applied electric field (V cm–1). Reaching high mobilities in OSCs is highly desirable as it allows faster operation of transistors and energy savings by reduced calculation times.[2, 3] However, OSCs performances (conventional values usually range from 1 to 10 cm2 V–1 s–1, with highest values obtained with single-crystal devices mostly exempt of structural defects) are still not comparable to that of state-of-the-art inorganic semiconductors (e.g. metal oxides with µ = 20-50 cm2 V–1 s–1 and polycrystalline silicon with µ > 100 cm2 V–1 s–1) thereby hampering important potential technological applications such as flexible organic light-emitting diode (OLED) displays and wearable electronics.[3, 4]

ORCID iDs

Tsutsui, Yusuke, Schweicher, Guillaume, Chattopadhyay, Basab, Sakurai, Tsuneaki, Arlin, Jean-Baptiste, Ruzié, C., Aliev, Almaz, Ciesielski, Artur, Colella, Silvia, Kennedy, Alan R. ORCID logoORCID: https://orcid.org/0000-0003-3652-6015, Lemaur, Vincent, Olivier, Yoann, Hadji, Rachid, Sanguinet, Lionel, Castet, Frédéric, Osella, Silvio, Dudenko, Dymytro, Beljonne, David, Cornil, Jérôme, Samori, Paolo, Seki, Shu and Geerts, Yves H.;
CORE (COnnecting REpositories)