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MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks

Zhong, Yanni and Roscoe, Nina and Holliday, Derrick and Finney, Stephen (2016) MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks. In: 8th IET International Conference on Power Electronics, Machines and Drives, 2016-04-19 - 2016-04-21, The Hilton Hotel.

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Abstract

A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and a GaN HEMT MMC are compared. Calculations suggest that the parallel-connected Si MOSFET MMC may be the most efficient topology for this LVDC application. In this paper, the current unbalance limits for the parallel-connected MOSFETs and the optimal number of parallel-connected MOSFETs for MMC are investigated. Experimental results are presented for current sharing in parallel-connected MOSFETs and for the verification of power loss in a single Si MMC module.

Item type: Conference or Workshop Item (Paper)
ID code: 56047
Notes: © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: MMC, MOSFET parallel-connection, LVDC, current sharing, thermal modelling, Electrical engineering. Electronics Nuclear engineering, Electrical and Electronic Engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Depositing user: Pure Administrator
Date deposited: 31 Mar 2016 11:03
Last modified: 24 Sep 2017 20:51
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URI: https://strathprints.strath.ac.uk/id/eprint/56047
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