Crystalfield symmetries of luminescent Eu3+ centers in GaN : the importance of the 5D0 to 7F1 transition

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O'Donnell, K. P. and Edwards, P. R. and Yamaga, M. and Lorenz, K. and Kappers, M. J. and Boćkowski, M. (2016) Crystalfield symmetries of luminescent Eu3+ centers in GaN : the importance of the 5D0 to 7F1 transition. Applied Physics Letters, 108 (2). 022102. ISSN 0003-6951 (https://doi.org/10.1063/1.4939631)

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Abstract

Eu-doped GaN is a promising material with potential application not only in optoelectronics but also in magneto-optical and quantum optical devices ‘beyond the light emitting diode’. Its interesting spectroscopy is unfortunately complicated by spectral overlaps due to ‘site multiplicity’, the existence in a given sample of multiple composite centers in which Eu ions associate with intrinsic or extrinsic defects. We show here that elementary crystalfield analysis of the 5D0 to 7F1 transition can critically distinguish such sites. Hence, we find that the center involved in the hysteretic photochromic switching (HPS) observed in GaN(Mg):Eu, proposed as the basis of a new solid state qubit material, is not in fact Eu1, as previously reported, but a related defect, Eu1(Mg). Furthermore, the decomposition of the crystalfield distortions of Eu0, Eu1(Mg) and Eu1 into axial and non-axial components strongly suggests reasonable microscopic models for the defects themselves.

ORCID iDs

O'Donnell, K. P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Edwards, P. R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Yamaga, M., Lorenz, K., Kappers, M. J. and Boćkowski, M.;
  • Item type:Article
    ID code:55347
    Dates:
    Date
    Event
    11 January 2016
    Published
    24 December 2015
    Accepted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:18 Jan 2016 16:20
    Last modified:12 Dec 2024 03:47
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/55347
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