Thickness dependence of the anisotropy of anodic sulphide films on CdxHg1-xTe studied using surface second harmonic generation

Brevet, P.F. and Russier-Antoine, I. and Benichou, E. and Berlouis, L.E.A. and Wark, A.W. and Cruickshank, F.R. (2002) Thickness dependence of the anisotropy of anodic sulphide films on CdxHg1-xTe studied using surface second harmonic generation. Physica Status Solidi B, 229 (2). pp. 647-651. ISSN 0370-1972

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Abstract

The growth of anodic sulphide films on vicinal CdxHg1—xTe (CMT) surfaces has been investigated as a function of sulphide layer thickness by rotation anisotropy using second harmonic generation (SHG). The presence of thin CdS films on the CMT surface does not alter the fourfold pattern observed for the bare CMT surface. However, with increasing sulphide film thickness (>100 nm) and for growth at constant potential, a drastic loss in the reflected SH intensity occurs. This reduction has been attributed to the formation and incorporation of β-HgS in the layer at the more positive potentials. This compound absorbs the SH signal generated by the composite system of CMT/sulphide layer.