Electrical activity of carbon-hydrogen centers in Si

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Andersen, O. and Peaker, A.R. and Dobaczewski, L. and Bonde Nielsen, K. and Hourahine, B. and Jones, R. and Briddon, P.R. and Öberg, S. (2002) Electrical activity of carbon-hydrogen centers in Si. Physical Review B: Condensed Matter and Materials Physics, 66 (23). 235205. ISSN 1098-0121 (https://doi.org/10.1103/PhysRevB.66.235205)

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Abstract

The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.

ORCID iDs

Andersen, O., Peaker, A.R., Dobaczewski, L., Bonde Nielsen, K., Hourahine, B. ORCID logoORCID: https://orcid.org/0000-0002-7667-7101, Jones, R., Briddon, P.R. and Öberg, S.;
CORE (COnnecting REpositories)