Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexylthienothiophene units
McEntee, Greg J. and Vilela, Filipe and Skabara, Peter and Anthopoulos, Thomas D. and Labram, John G. and Tierney, Steve and Harrington, Ross W. and Clegg, William (2011) Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexylthienothiophene units. Journal of Materials Chemistry, 21 (7). pp. 2091-2097. ISSN 0959-9428 (https://doi.org/10.1039/c0jm02607g)
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Abstract
The synthesis of a new conjugated material is reported; BDHTT–BBT features a central electron-deficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (−5.7 eV) and LUMO (−2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film samples. OFETs were constructed with vacuum deposited films of BDHTT–BBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 × 10−3 cm2 V−1 s−1, with an on/off ratio of 104–105 and a threshold voltage of −42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices.
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Item type: Article ID code: 28796 Dates: DateEvent2011Published8 November 2010Published OnlineSubjects: Science > Chemistry Department: Faculty of Science > Pure and Applied Chemistry
Technology and Innovation Centre > PhotonicsDepositing user: Mrs Roslyn MacDonald Date deposited: 15 Nov 2011 15:46 Last modified: 11 Nov 2024 09:35 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/28796