Surface properties of GaN fabricated by laser lift-off and ICP etching

Kim, Hyeon-Soo and Dawson, M.D. and Yeom, Geun-Young (2002) Surface properties of GaN fabricated by laser lift-off and ICP etching. New Physics: Korean Physical Society, 40 (4). pp. 567-571. ISSN 0374-4914 (http://dx.doi.org/10.3938/jkps.40.567)

Abstract

In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.

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• Item metadata

  Item type:	Article
  ID code:	23473
  Dates:	Date Event April 2002 Published
  Subjects:	Science > Physics
  Department:	Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Strathprints Administrator
  Date deposited:	08 Jul 2010 15:34
  Last modified:	08 Apr 2024 18:06
  URI:	https://strathprints.strath.ac.uk/id/eprint/23473