Surface properties of GaN fabricated by laser lift-off and ICP etching
Kim, Hyeon-Soo and Dawson, M.D. and Yeom, Geun-Young (2002) Surface properties of GaN fabricated by laser lift-off and ICP etching. New Physics: Korean Physical Society, 40 (4). pp. 567-571. ISSN 0374-4914 (http://dx.doi.org/10.3938/jkps.40.567)
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In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.
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Item type: Article ID code: 23473 Dates: DateEventApril 2002PublishedSubjects: Science > Physics Department: Faculty of Science > Physics > Institute of Photonics Depositing user: Strathprints Administrator Date deposited: 08 Jul 2010 15:34 Last modified: 08 Apr 2024 18:06 URI: https://strathprints.strath.ac.uk/id/eprint/23473
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