Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities

Bejtka, K. and Edwards, P.R. and Martin, R.W. and Reveret, F. and Vasson, A. and Leymarie, J. and Sellers, I.R. and Leroux, M. (2008) Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities. Semiconductor Science and Technology, 23 (4). ISSN 0268-1242 (http://dx.doi.org/10.1088/0268-1242/23/4/045008)

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Abstract

The optical properties and fabrication of ultrathin GaN-based microcavities grown on silicon substrates are described. The epitaxial part of the optical cavities, consisting of a λ/2 GaN layer above a 3-period epitaxial Bragg mirror, is sandwiched between two silica/zirconia mirrors. At a suitable point in the fabrication process the silicon substrate was selectively removed using via holes. The cavity mode and excitonic resonance are observed by reflectivity at low and room temperature, demonstrating a quality factor of ~125. The dispersion of the modes and their linewidth is measured using angle-resolved reflectivity and successfully modelled using transfer matrix simulations.

ORCID iDs

Bejtka, K., Edwards, P.R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Reveret, F., Vasson, A., Leymarie, J., Sellers, I.R. and Leroux, M.;
  • Item type:Article
    ID code:19734
    Dates:
    Date
    Event
    April 2008
    Published
    Notes:Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Strathprints Administrator
    Date deposited:26 May 2010 18:16
    Last modified:11 Nov 2024 09:21
    URI:https://strathprints.strath.ac.uk/id/eprint/19734
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