Optical and structural properties of Eu-implanted InxAl1−xN

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Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Trager-Cowan, C. and Matias, V. and Vantomme, A. and Lorenz, K. and Alves, E. and Watson, I.M. (2009) Optical and structural properties of Eu-implanted InxAl1−xN. Journal of Applied Physics, 106 (8). 083508. ISSN 0021-8979 (https://doi.org/10.1063/1.3245386)

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Abstract

Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

ORCID iDs

Roqan, I.S., O'Donnell, K.P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Trager-Cowan, C. ORCID logoORCID: https://orcid.org/0000-0001-8684-7410, Matias, V., Vantomme, A., Lorenz, K., Alves, E. and Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993;
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