Etch end-point detection of GaN-based devices using optical emission spectroscopy

Kim, H.S. and Sung, Y.J. and Kim, D.W. and Kim, T. and Dawson, M.D. and Yeom, G.Y. (2001) Etch end-point detection of GaN-based devices using optical emission spectroscopy. Materials Science and Engineering B, 82 (1-3). pp. 159-162. ISSN 0921-5107 (https://doi.org/10.1016/S0921-5107(00)00798-4)

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Abstract

In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES experiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A possibility of detecting etch end-point by OES was identified for both optoelectronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm).

ORCID iDs

Kim, H.S., Sung, Y.J., Kim, D.W., Kim, T., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989 and Yeom, G.Y.;
CORE (COnnecting REpositories)