An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells

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Boyall, N.M. and Durose, K. and Watson, I.M. (2003) An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells. MRS Online Proceedings Library, 743. ISSN 0272-9172

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Abstract

The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

ORCID iDs

Boyall, N.M., Durose, K. and Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993;
CORE (COnnecting REpositories)