Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser

Valentine, G.J. and Kemp, A. and Burns, D. and Balembois, F. and Georges, P. and Bernas, H. and Aron, A. and Aka, G. and Sibbett, W. and Brun, A. (2000) Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser. In: Conference on Lasers and Electro Optics Europe, 2000-09-10 - 2000-09-15. (Unpublished)

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Abstract

Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.

ORCID iDs

Valentine, G.J., Kemp, A. ORCID logoORCID: https://orcid.org/0000-0002-1076-3138, Burns, D., Balembois, F., Georges, P., Bernas, H., Aron, A., Aka, G., Sibbett, W. and Brun, A.;
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