A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader

Hastie, J.E. and Jeon, C.W. and Burns, D. and Hopkins, J.M. and Calvez, S. and Abram, R.H. and Dawson, M.D.; Huber, Guenter and Scherbakov, Ivan A. and Panchenko, Vladislav Y., eds. (2003) A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader. In: International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems. SPIE, Bellingham, pp. 201-206. ISBN 9780819450050 (https://doi.org/10.1117/12.517987)

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Abstract

High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

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