Varying surface chemistries for p-doped and n-doped silicon nanocrystals and impact on photovoltaic devices

Velusamy, Tamilselvan and Mitra, Somak and Macias-Montero, Manuel and Svrcek, Vladimir and Mariotti, Davide (2015) Varying surface chemistries for p-doped and n-doped silicon nanocrystals and impact on photovoltaic devices. ACS Applied Materials and Interfaces, 7 (51). pp. 28207-28214. ISSN 1944-8252 (https://doi.org/10.1021/acsami.5b06577)

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Abstract

Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.

ORCID iDs

Velusamy, Tamilselvan, Mitra, Somak, Macias-Montero, Manuel, Svrcek, Vladimir and Mariotti, Davide ORCID logoORCID: https://orcid.org/0000-0003-1504-4383;
CORE (COnnecting REpositories)