Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

Schulz, N. and Rattunde, M. and Manzor, A.C.S. and Kohler, K. and Wagner, J. and Hopkins, J.M. and Burns, D.; (2007) Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime. In: Conference on Lasers and Electro-Optics, 2007. CLEO 2007. IEEE, pp. 1-2. ISBN 9781557528346 (http://dx.doi.org/10.1109/CLEO.2007.4452522)

Abstract

We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35mum optimized for resonant optical in-well pumping around 1.95mum. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.

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• Item metadata

  Item type:	Book Section
  ID code:	9018
  Dates:	Date Event 11 May 2007 Published
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Strathprints Administrator
  Date deposited:	09 Nov 2009 15:31
  Last modified:	11 Nov 2024 14:37
  URI:	https://strathprints.strath.ac.uk/id/eprint/9018