Development of high average power picosecond laser systems

Burns, D. and Valentine, G.J. and Bente, E.A.J.M. and Ferguson, A.I.; Kudryashov, Alexis V., ed. (2003) Development of high average power picosecond laser systems. In: Laser resonators and beam control V: Proceedings SPIE 2002. SPIE, p. 129. ISBN 0819443689 (http://dx.doi.org/10.1117/12.469492)

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Abstract

The use of semiconductor saturable absorbers has emerged as an enabling technology in modern passively modelocked laser systems. Their application to high power picosecond lasers, most notably Nd-doped lasers, has produced systems with average power levels of a few tens of watts. In this paper, the development of these laser systems to the 100W level and above will be outlined.

ORCID iDs

Burns, D., Valentine, G.J., Bente, E.A.J.M. and Ferguson, A.I. ORCID logoORCID: https://orcid.org/0000-0002-5927-0692; Kudryashov, Alexis V.