In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG

Watson, I.M. and Dawson, M.D. and Deatcher, C.J. and Kim, H.S. and Kim, K.S. and Liu, C. (2001) In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. In: European workshop on metalorganic vapour phase epitaxy, 2001-06-10 - 2001-06-13. (Unpublished)

Abstract

This paper covers in-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. It was presented at the 2001 European workshop on metalorganic vapour phase epitaxy.

ORCID iDs

Watson, I.M. ORCID: https://orcid.org/0000-0002-8797-3993

Dawson, M.D. ORCID: https://orcid.org/0000-0002-6639-2989

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• Item metadata

  Item type:	Conference or Workshop Item(Paper)
  ID code:	8998
  Dates:	Date Event 13 June 2001 Published
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics > Institute of Photonics Faculty of Science > Physics
  Depositing user:	Strathprints Administrator
  Date deposited:	05 Nov 2009 14:44
  Last modified:	11 Nov 2024 16:15
  URI:	https://strathprints.strath.ac.uk/id/eprint/8998