Practical computation of the charge mobility in molecular semiconductors using transient localization theory
Nematiaram, Tahereh and Ciuchi, Sergio and Xie, Xiaoyu and Fratini, Simone and Troisi, Alessandro (2019) Practical computation of the charge mobility in molecular semiconductors using transient localization theory. Journal of Physical Chemistry C, 123. 6989–6997. ISSN 1932-7447 (https://doi.org/10.1021/acs.jpcc.8b11916)
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Abstract
We describe a practical and flexible procedure to compute the charge carrier mobility in the transient localization regime. The method is straightforward to implement and computationally very inexpensive. We highlight the practical steps and provide sample computer codes. To demonstrate the flexibility of the method and generalize the theory, the correlation between the fluctuations of the transfer integrals is assessed. The method can be transparently linked with the results of electronic structure calculations and can therefore be used to extract the charge mobility at no additional cost.
ORCID iDs
Nematiaram, Tahereh ORCID: https://orcid.org/0000-0002-0371-4047, Ciuchi, Sergio, Xie, Xiaoyu, Fratini, Simone and Troisi, Alessandro;-
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Item type: Article ID code: 84511 Dates: DateEvent28 March 2019Published26 February 2019AcceptedNotes: J. Phys. Chem. C 2019, 123, 12, 6989–6997 Subjects: Science > Chemistry Department: Faculty of Science > Pure and Applied Chemistry Depositing user: Pure Administrator Date deposited: 02 Mar 2023 13:59 Last modified: 19 Nov 2024 15:34 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/84511