Acceptor state anchoring in gallium nitride

Cameron, D. and O'Donnell, K.P. and Edwards, P.R. and Peres, M. and Lorenz, K. and Kappers, M.J. and Boćkowski, M. (2020) Acceptor state anchoring in gallium nitride. Applied Physics Letters, 116 (10). 102105. ISSN 0003-6951 (https://doi.org/10.1063/1.5142168)

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Abstract

The dual nature of the magnesium acceptor in gallium nitride results in dynamic defect complexes. Europium spectator ions reveal switching between two spectrally unique metastable centres, each corresponding to a particular acceptor state. By ion co-implantation of europium and oxygen into GaN(Mg), we produce, in addition, an anchored state system. In doing so we create an abundance of previously unidentified stable centres which we denote as "Eu0(Ox)". We introduce a microscopic model for these centres with oxygen substituting for nitrogen in the bridging site.