Thermal-error regime in high-accuracy gigahertz single-electron pumping

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Zhao, R. and Rossi, A. and Giblin, S. P. and Fletcher, J. D. and Hudson, F. E. and Möttönen, M. and Kataoka, M. and Dzurak, A. S. (2017) Thermal-error regime in high-accuracy gigahertz single-electron pumping. Physical Review Applied, 8 (4). 044021. ISSN 2331-7043 (https://doi.org/10.1103/PhysRevApplied.8.044021)

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Abstract

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of ef within a measurement uncertainty as low as 0.27 ppm.

ORCID iDs

Zhao, R., Rossi, A. ORCID logoORCID: https://orcid.org/0000-0001-7935-7560, Giblin, S. P., Fletcher, J. D., Hudson, F. E., Möttönen, M., Kataoka, M. and Dzurak, A. S.;
CORE (COnnecting REpositories)