Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

Kruczek, T. and Leyman, R. and Carnegie, D. and Bazieva, N. and Erbert, G. and Schulz, S. and Reardon, C. and Reynolds, S. and Rafailov, E. U. (2012) Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. Applied Physics Letters, 101 (8). 081114. ISSN 0003-6951 (https://doi.org/10.1063/1.4747724)

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Abstract

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals’ difference frequency ~1 THz.

  • Item type:Article
    ID code:54166
    Dates:
    Date
    Event
    23 August 2012
    Published
    23 August 2012
    Published Online
    9 August 2012
    Accepted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics > Institute of Photonics
    Depositing user: Pure Administrator
    Date deposited:08 Sep 2015 07:51
    Last modified:14 Apr 2024 00:32
    URI:https://strathprints.strath.ac.uk/id/eprint/54166
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