Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy

Sun, H.D. and Calvez, S. and Dawson, M.D. and Gilet, P. and Grenouillet, L. and Million, A. (2005) Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy. Applied Physics A: Materials Science and Processing, 80 (1). pp. 9-12. ISSN 0947-8396 (http://www.10.1007/s00339-004-2985-3)

Full text not available in this repository.Request a copy

Abstract

We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.

CORE (COnnecting REpositories)