Improved current spreading in 370nm AlGaN microring light emitting diodes

Choi, H.W. and Dawson, M.D. (2005) Improved current spreading in 370nm AlGaN microring light emitting diodes. Applied Physics Letters, 86 (053504). ISSN 0003-6951 (http://dx.doi.org/10.1063/1.1861130)

Full text not available in this repository.Request a copy

Abstract

The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.

ORCID iDs

Choi, H.W. and Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
CORE (COnnecting REpositories)