Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers

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Clark, A.H. and Calvez, S. and Laurand, N. and Macaluso, R. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M. (2004) Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers. IEEE Journal of Quantum Electronics, 40 (7). 878 -883. ISSN 0018-9197 (http://dx.doi.org/10.1109/JQE.2004.830201)

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Abstract

We report on the continuous-wave amplification characteristics of an optically pumped 1.3-/spl mu/m multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.

ORCID iDs

Clark, A.H., Calvez, S., Laurand, N. ORCID logoORCID: https://orcid.org/0000-0003-0486-4300, Macaluso, R., Sun, H.D., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Jouhti, T., Kontinnen, J. and Pessa, M.;
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