Influence of laser-drive parameters on annular fast electron transport in silicon
MacLellan, D A and Carroll, D C and Gray, R J and Robinson, A P L and Desjarlais, M P and Neely, D and McKenna, P (2014) Influence of laser-drive parameters on annular fast electron transport in silicon. Plasma Physics and Controlled Fusion, 56 (8). 084002. ISSN 0741-3335 (https://doi.org/10.1088/0741-3335/56/8/084002)
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Abstract
Three-dimensional hybrid particle-in-cell simulations are used to investigate the sensitivity of annular fast electron transport patterns in silicon to the properties of the drive laser pulse. It is found that the annular transport, which is induced by self-generated resistive magnetic fields, is particularly sensitive to the peak laser pulse intensity. The radius of the annular fast electron distribution can be varied by changing the drive laser pulse properties, and in particular the focal spot size. An ability to optically 'tune' the properties of an annular fast electron transport pattern could have important implications for the development of advanced ignition schemes and for tailoring the properties of beams of laser-accelerated ions.
ORCID iDs
MacLellan, D A, Carroll, D C, Gray, R J ORCID: https://orcid.org/0000-0003-0610-9595, Robinson, A P L, Desjarlais, M P, Neely, D and McKenna, P ORCID: https://orcid.org/0000-0001-8061-7091;-
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Item type: Article ID code: 50122 Dates: DateEventAugust 2014Published22 July 2014Published Online13 January 2014AcceptedSubjects: Science > Physics Department: Faculty of Science > Physics Depositing user: Pure Administrator Date deposited: 04 Nov 2014 10:21 Last modified: 11 Nov 2024 10:50 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/50122