Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor

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Borghesi, A. and Giardini, M. E. and Marazzi, M. and Sassella, A. and De Santi, G. (1997) Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor. Applied Physics Letters, 70 (7). pp. 892-894. ISSN 0003-6951 (https://doi.org/10.1063/1.118306)

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Abstract

The optical functions of amorphous and polycrystalline silicon thin films deposited on single oxidized silicon substrates by chemical vapor deposition in a wide range of deposition temperatures have been determined using spectroscopic ellipsometry. The data analysis is performed by direct inversion of the experimental spectra, therefore, obtaining results independent of any film modeling. The optical results indicate that the film structure changes as the deposition temperature increases from amorphous to polycrystalline with different grain size and distribution.

ORCID iDs

Borghesi, A., Giardini, M. E. ORCID logoORCID: https://orcid.org/0000-0003-4849-9683, Marazzi, M., Sassella, A. and De Santi, G.;
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