Silicon for thin-film transistors

Wagner, Sigurd and Gleskova, Helena and Cheng, I. Chun and Wu, Ming (2003) Silicon for thin-film transistors. Thin Solid Films, 430 (1-2). pp. 15-19. ISSN 0040-6090 (https://doi.org/10.1016/S0040-6090(03)00121-4)

Abstract

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.

ORCID iDs

Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639

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  Item type:	Article
  ID code:	47454
  Dates:	Date Event 22 April 2003 Published
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Engineering > Electronic and Electrical Engineering
  Depositing user:	Pure Administrator
  Date deposited:	11 Apr 2014 10:40
  Last modified:	11 Nov 2024 10:39
  Related URLs:	Scopus publication
  URI:	https://strathprints.strath.ac.uk/id/eprint/47454