Semiconductor snail laser

Strain, M.J. and Pérez-Serrano, A. and Mezösi, G. and Verschaffelt, G. and Scirè, A. and Danckaert, J. and Sorel, M. and Balle, S.; (2009) Semiconductor snail laser. In: European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. IEEE, New York. ISBN 9781424440795 (https://doi.org/10.1109/CLEOE-EQEC.2009.5191743)

Full text not available in this repository.Request a copy

Abstract

A new snail laser geometry is modelled and presented, exhibiting stable, unidirectional lasing at both 1550 nm and 808 nm. We have calculated the fundamental mode thresholds and output power for Semiconductor Snail Laser (SSL) as a function of device parameters, i.e. coupler efficiency and output facets reflectivities. The coupler efficiency is the fraction of light transmitted between the waveguides in the directional couplers (DC). We have used a scattering matrix formulation and an analytical approximation to the optical susceptibility for the medium description, in order to determine the "optimal" coupling efficiency that maximizes the output power. Lasing action and good emission properties were therefore theoretically predicted.

ORCID iDs

Strain, M.J. ORCID logoORCID: https://orcid.org/0000-0002-9752-3144, Pérez-Serrano, A., Mezösi, G., Verschaffelt, G., Scirè, A., Danckaert, J., Sorel, M. and Balle, S.;
CORE (COnnecting REpositories)