Single point diamond turning of single crystal silicon carbide : molecular dynamic simulation study

Goel, S. and Luo, X. and Reuben, R.L. and Rashid, W.B. and Sun, J.; (2011) Single point diamond turning of single crystal silicon carbide : molecular dynamic simulation study. In: Key Engineering Materials. Trans Tech Publications Ltd, Durnten-Zurich, Switzerland, pp. 150-155. ISBN 9783037852972 (https://doi.org/10.4028/www.scientific.net/KEM.496...)

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Abstract

Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.

ORCID iDs

Goel, S., Luo, X. ORCID logoORCID: https://orcid.org/0000-0002-5024-7058, Reuben, R.L., Rashid, W.B. and Sun, J.;
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