Annular fast electron transport in silicon arising from low-temperature resistivity

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MacLellan, David and Carroll, David and Gray, Ross and Booth, Nicola and Burza, Matthias and Desjarlais, Mike and Du, F and Izquierdo, Bruno and Neely, David and Powell, Haydn and Robinson, Alex and Rusby, Dean and Scott, Graeme and Yuan, Xiaohui and Wahlstrom, Claes-Goran and McKenna, Paul (2013) Annular fast electron transport in silicon arising from low-temperature resistivity. Physical Review Letters, 111 (9). 095001. ISSN 1079-7114 (https://doi.org/10.1103/PhysRevLett.111.095001)

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Abstract

Fast electron transport in Si, driven by ultra-intense laser pulses, is investigated experimentally and via 3D hybrid-PIC simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.

ORCID iDs

MacLellan, David, Carroll, David, Gray, Ross ORCID logoORCID: https://orcid.org/0000-0003-0610-9595, Booth, Nicola, Burza, Matthias, Desjarlais, Mike, Du, F, Izquierdo, Bruno, Neely, David, Powell, Haydn, Robinson, Alex, Rusby, Dean, Scott, Graeme, Yuan, Xiaohui, Wahlstrom, Claes-Goran and McKenna, Paul ORCID logoORCID: https://orcid.org/0000-0001-8061-7091;
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