Compact semiconductor tapers for deep-to-shallow etch transitions

Strain, M.J. and Sorel, M. (2007) Compact semiconductor tapers for deep-to-shallow etch transitions. IEEE Photonics Technology Letters, 19 (19). pp. 1544-1546. (https://doi.org/10.1109/LPT.2007.903886)

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Abstract

Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices along with a transfer matrix method representation that confirms the extraction of values for reflectivity from the transmission spectra of the devices. Tapers of sub-100-mum lengths are shown to exhibit losses of <0.5 dB and reflectivities of <0.05%.

ORCID iDs

Strain, M.J. ORCID logoORCID: https://orcid.org/0000-0002-9752-3144 and Sorel, M.;
CORE (COnnecting REpositories)