Transition from dynamic to static disorder in one-dimensional organic semiconductors

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Troisi, Alessandro and Cheung, David (2009) Transition from dynamic to static disorder in one-dimensional organic semiconductors. Journal of Chemical Physics, 131 (1). 014703. ISSN 0021-9606 (https://doi.org/10.1063/1.3167406)

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Abstract

A generic model Hamiltonian is proposed for the study of the transport in a quasi-one-dimensional semiconductor in the charge transport regime intermediate between dynamic localization and static localization due to structural disorder. This intermediate regime may be appropriate for many organic semiconductors, including polymers, discotic liquid crystals, and DNA. The dynamics of the charge carrier is coupled to classical Langevin oscillators whose spectral density can be adjusted to model experimental systems of interest. In the proposed model, the density of states is constant (at constant temperature) and the transition from dynamic to static disorder is controlled by a single parameter. This paper further clarifies that the density of states may not contain all the information needed to describe the charge transport in some materials.

  • Item type:Article
    ID code:43527
    Dates:
    Date
    Event
    7 July 2009
    Published
    6 July 2009
    Published Online
    Subjects:Science > Chemistry
    Department:Faculty of Science > Pure and Applied Chemistry
    Depositing user: Pure Administrator
    Date deposited:22 Apr 2013 10:23
    Last modified:11 Nov 2024 10:23
    URI:https://strathprints.strath.ac.uk/id/eprint/43527
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