Simple models for InGaN alloys

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Elfituri, Fathi and Hourahine, Benjamin (2012) Simple models for InGaN alloys. Physica Status Solidi A, 209 (79). pssc.201100147.R1. ISSN 1862-6300 (https://doi.org/10.1002/pssa.201100147)

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Abstract

The properties of InGaN alloys are important for many applications in optoelectronics, since their fundamental gap spans the visible range. Calculating properties, particularly for InN, is theoretically challenging, especially to obtain accurate values for the band gap. We have developed a semi-empirical parametrization of (In,Ga) N using the density functional based tight binding method (DFTB), where the band gaps of InN and GaN have been empirically corrected to experiment. We demonstrate the performance of this method by calculating a range of properties for the two materials, including elastic constants and carrier effective masses. There are several methods to model alloys of these material, one of the simplest being the virtual crystal approximation, which we apply to derive electronic properties over the whole composition range for InGaN.

ORCID iDs

Elfituri, Fathi and Hourahine, Benjamin ORCID logoORCID: https://orcid.org/0000-0002-7667-7101;
  • Item type:Article
    ID code:42202
    Dates:
    Date
    Event
    2012
    Published
    29 November 2012
    Published Online
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:26 Nov 2012 14:02
    Last modified:11 Nov 2024 09:57
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/42202
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