Defect evolution and interplay in n-type InN

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Rauch, Christian and Tuomisto, Filip and Vilalta-Clemente, Arantxa and Lacroix, Bertrand and Ruterana, Pierre and Kraeusel, Simon and Hourahine, Benjamin and Schaff, William J. (2012) Defect evolution and interplay in n-type InN. Applied Physics Letters, 100 (9). 091907. ISSN 0003-6951 (https://doi.org/10.1063/1.3688038)

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Abstract

The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.

ORCID iDs

Rauch, Christian, Tuomisto, Filip, Vilalta-Clemente, Arantxa, Lacroix, Bertrand, Ruterana, Pierre, Kraeusel, Simon, Hourahine, Benjamin ORCID logoORCID: https://orcid.org/0000-0002-7667-7101 and Schaff, William J.;
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